Photoluminescence and lasing characteristics of 1.3 /spl mu/m GaInNAs/GaAsP/GaAs strain-compensated quantum wells

2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI:10.1109/ISCS.2003.1239912

M. Kawaguchi, T. Miyamoto, S. Kawakami, A. Saito, F. Koyama

引用次数: 0

Abstract

We investigated photoluminescence (PL) and lasing characteristics of 1.3 /spl mu/m GaInNAs/GaAsP/GaAs strain-compensated quantum wells by MOCVD. We observed the increase of PL intensity and reduction of the threshold by applying appropriate GaAsP barriers.

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1.3 /spl μ m GaInNAs/GaAsP/GaAs应变补偿量子阱的光致发光和激光特性

利用MOCVD研究了1.3 /spl mu/m GaInNAs/GaAsP/GaAs应变补偿量子阱的光致发光和激光特性。我们观察到适当的GaAsP屏障增加了PL强度，降低了阈值。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2003 International Symposium on Compound Semiconductors

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