Self-heating effect on device characteristics of GaN/AlGaN HEMTs: 2D Monte Carlo device simulation

2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI:10.1109/ISCS.2003.1239960

H. Fujishiro, N. Mikami, T. Takei, M. Izawa, T. Moku, K. Ohtuka

引用次数: 4

Abstract

In this paper, the mechanism of the self-heating in the GaN/AlGaN HEMT and its influence on the device performance theoritically by 2D Monte Carlo device simulation. Three different substrates (i.e., 6H-SiC, sapphire and Si) have been used and compared in this work.

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自热效应对GaN/AlGaN HEMTs器件特性的影响:二维蒙特卡罗器件模拟

本文通过二维蒙特卡罗器件模拟，从理论上研究了GaN/AlGaN HEMT的自热机理及其对器件性能的影响。在这项工作中，使用了三种不同的衬底(即6H-SiC，蓝宝石和Si)并进行了比较。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2003 International Symposium on Compound Semiconductors

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