M. Kawaguchi, T. Miyamoto, S. Kawakami, A. Saito, F. Koyama
{"title":"1.3 /spl μ m GaInNAs/GaAsP/GaAs应变补偿量子阱的光致发光和激光特性","authors":"M. Kawaguchi, T. Miyamoto, S. Kawakami, A. Saito, F. Koyama","doi":"10.1109/ISCS.2003.1239912","DOIUrl":null,"url":null,"abstract":"We investigated photoluminescence (PL) and lasing characteristics of 1.3 /spl mu/m GaInNAs/GaAsP/GaAs strain-compensated quantum wells by MOCVD. We observed the increase of PL intensity and reduction of the threshold by applying appropriate GaAsP barriers.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Photoluminescence and lasing characteristics of 1.3 /spl mu/m GaInNAs/GaAsP/GaAs strain-compensated quantum wells\",\"authors\":\"M. Kawaguchi, T. Miyamoto, S. Kawakami, A. Saito, F. Koyama\",\"doi\":\"10.1109/ISCS.2003.1239912\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We investigated photoluminescence (PL) and lasing characteristics of 1.3 /spl mu/m GaInNAs/GaAsP/GaAs strain-compensated quantum wells by MOCVD. We observed the increase of PL intensity and reduction of the threshold by applying appropriate GaAsP barriers.\",\"PeriodicalId\":404065,\"journal\":{\"name\":\"2003 International Symposium on Compound Semiconductors\",\"volume\":\"7 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-10-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2003 International Symposium on Compound Semiconductors\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISCS.2003.1239912\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2003 International Symposium on Compound Semiconductors","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISCS.2003.1239912","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Photoluminescence and lasing characteristics of 1.3 /spl mu/m GaInNAs/GaAsP/GaAs strain-compensated quantum wells
We investigated photoluminescence (PL) and lasing characteristics of 1.3 /spl mu/m GaInNAs/GaAsP/GaAs strain-compensated quantum wells by MOCVD. We observed the increase of PL intensity and reduction of the threshold by applying appropriate GaAsP barriers.
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