Electron injection in III-nitride semiconductors

Abstract

In this paper, it is found that electron injection into p-(Al)GaN-either from the electron beams of Scanning Electron Microscope (SEM) or from the application of an external voltage in a solid state device-increase the critical minority carrier diffusion length and lifetime. Consistent changes were observed in the material/sup ,/s optoelectronic properties, including photoresponse (2), and were attributed to charging of deep metastable Mg dopant related centers. The novel effects, induced by electron injection in III-Nitrides, and the ways to exploit them for tailoring the material/sup ,/s fundamental properties will be discussed. Application of the effects for performance improvement of photovoltaic UV detectors will be demonstrated.