Luminescence efficiency of InGaN multiple quantum well UV-LEDs

2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI:10.1109/ISCS.2003.1239950

C.-C. Pan, Chia-Ming Lee, Wen-Jay Hsu, Guan-Ting Chen, J. Chyi

引用次数: 0

Abstract

In this paper, we have conduced a series of measurements to investigate the luminescence efficiency of UV-LEDs with emission wavelength of 400 nm. Injection current-dependent characteristics are analysed to clarify the dominant factors affecting the luminescence efficiency of UV-LEDs.

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InGaN多量子阱uv - led的发光效率

在本文中，我们对发射波长为400 nm的uv - led的发光效率进行了一系列的测量。分析了注入电流依赖特性，阐明了影响uv - led发光效率的主要因素。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2003 International Symposium on Compound Semiconductors

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