DC, and RF scattering parameters, noise and power characteristics of enhancement-mode In/sub 0.51/Ga/sub 0.49/P/In/sub 0.15/Ga/sub 0.85/As/GaAs power pHEMTs
Yo‐Sheng Lin, Hsing-Yuan Tu, Dou-Shuan-Chou, Shey-Shi Lu
{"title":"DC, and RF scattering parameters, noise and power characteristics of enhancement-mode In/sub 0.51/Ga/sub 0.49/P/In/sub 0.15/Ga/sub 0.85/As/GaAs power pHEMTs","authors":"Yo‐Sheng Lin, Hsing-Yuan Tu, Dou-Shuan-Chou, Shey-Shi Lu","doi":"10.1109/ISCS.2003.1239986","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2003 International Symposium on Compound Semiconductors","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISCS.2003.1239986","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}