2003 International Symposium on Compound Semiconductors最新文献

{"title":"InAs/GaInSb/AlGaAsSb based type-II W-lasers","authors":"C. Mermelstein, J. Schmitz, R. Kiefer, M. Walther, J. Wagner","doi":"10.1109/ISCS.2003.1239981","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239981","url":null,"abstract":"In this paper, we study electrically pumped InAs/GaInSb/AlGaAsSb based type-II W-lasers were grown by solid-source on (100) GaSb:Te substrates, using valved cracker effusion cells for the supply of the group V elements. The active region, composed of typically 5 to 10 repetitions of the InAs/GaInSb/InAs W-building block separated by AlGaAsSb interperiod barriers, is surrounded by AlGaAsSb separate confinement layers forming the core of the optical waveguide with a total thickness of 1.3 /spl mu/m.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133296772","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Nanotip GaN pyramids formed by polarity-selective chemical etching","authors":"H. Ng, N. Weimann, A. Chowdhury, J. Shaw","doi":"10.1109/ISCS.2003.1239891","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239891","url":null,"abstract":"In this paper we have systematically studied the chemical etching of Ga and N-polar GaN with KOH, varying as a parameter either the concentration or the temperature of the solution for a fixed etch duration. The growth polarity can be controlled by the deposition of an appropriate buffer layer during molecular beam epitaxy (MBE). Using a patterned template, we grown samples with adjacent Ga-and N-polar regions. The N-polar GaN was found to be selectively etched while the Ga-polar GaN remained intact. We have made preliminary measurements of electron field emission from the GaN nanotip pyramids. Anode was suspended 50-500/spl mu/m above the film and I-V measurements were made at 50/spl mu/m increments.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130516273","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A picosecond passively mode-locked vertical extended cavity surface emitting diode laser","authors":"Qiang Zhang, K. Jasim, A. Nurmikko, A. Mooradian, G. Carey, W. Ha, E. Ippen","doi":"10.1109/ISCS.2003.1239993","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239993","url":null,"abstract":"We demonstrate multi-GHz rate picosecond pulse generation by passive mode- locking of an extended surface emitting diode laser which permits the incorporation of a saturable Bragg reflector mirror into a device, here designed for large aperture operation as a high power 980 nm InGaAs multiple quantum-well vertical cavity source? 2002 Optical Society of America OClS Codes: 120.5700,320.7120 Modelocking of lasers is a technique for generation of psec optical pulses. For potential applications ranging from high-speed chipscale optical clocks to nonlinear optical imaging in biology, passive mode-locking of a compact source such as a VCSEL is of interest. Keller and co-workers (I), in particular, have achieved high power psec pulse generation at multi-GHz repetition rates from optically pumped InGaAs MQW-based external cavity VCSELs, incorporating a semiconductor saturable Bragg absorber mirror (SESAM) for passive modelocking. Here we demonstrate the modelocking of a compact vertical extended cavity surface emitting diode laser (VECSEL) by using specific device design ideas.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"183 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123004935","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Oxides beyond SiO/sub 2/: strategies to integrate oxides epitaxially with silicon","authors":"D. Schlom","doi":"10.1109/ISCS.2003.1239965","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239965","url":null,"abstract":"A methodology is described, based on thermodynamics and oxidation kinetics, for the integration of oxides with silicon with the goal of achieving the desired oxide in close proximity with the underlying silicon substrate.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116482488","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Annealing temperature dependence of contact resistance and stability for Ti/Al/Pt/Au ohmic contacts to bulk n-ZnO","authors":"K. Ip, K. Baik, Y. Heo, D. Norton, S. Pearton, J. LaRoche, B. Luo, F. Ren, J. Zavada","doi":"10.1109/ISCS.2003.1239937","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239937","url":null,"abstract":"Summary form only given. The authors report on the annealing temperature dependence of contact resistance and morphology for Ti/Al/Pt/Au contacts on high-quality, undoped (n/spl sim/10/sup 17/ cm/sup -3/) bulk ZnO substrates. Two different surface cleaning procedures were employed, although it was found that in general the as-received surface produced the lowest specific contact resistances.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124903591","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Growth characteristics of ZnO nanowires on silicon, sapphire and GaN substrates","authors":"H. Hong, T. Seong, Seonghoon Lee","doi":"10.1109/ISCS.2003.1239936","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239936","url":null,"abstract":"ZnO nanowires have been grown on [001] silicon, c-sapphire and micro-patterned (0001) GaN substrates, which are characterized by scanning electron microscopy, X-ray diffraction, and photoluminescence. It is shown that the crystallinity of the nanowires sensitively depends on the types of the substrates. The ZnO nanowires have good optical and structural properties.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114516569","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Monolithically integrated InP-based 1.55 /spl mu/m photoreceivers using V-grooved RFPD/HBT integration technology","authors":"B. Lee, Y. Song, K. Yang","doi":"10.1109/ISCS.2003.1239968","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239968","url":null,"abstract":"InP-based photoreceivers were successfully integrated with the InP V-groove and the refracting facet photodiode (RFPD), for the first time, based on the shared layer integration technology. The InP-V groove optical bench and the RFPD were simultaneously fabricated using the base-collector layers of the InP/InGaAs HBT. The alignment process of the optical fibre was greatly simplified using the fabricated InP V-grooves. The developed integration technology allowing simple and efficient optical coupling using the on-chip InP V-groove was high speed photoreceivers arrays for dense WDM application.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125403739","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Field effect and localization in InGaN/GaN quantum wells","authors":"A. Bell, F. Ponce, H. Marui, S. Tanaka","doi":"10.1109/ISCS.2003.1239878","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239878","url":null,"abstract":"In this paper single InGaN quantum wells with GaN barriers were grown by metal organic chemical vapour deposition on sapphire substrates. Time resolved CL measurements performed on single GaN/In/sub 0.13/Ga/sub 0.87/N/GaN quantum wells with d=6 nm and d=8 nm. Using the onset portion of the time delayed spectra we find that both localisation in potential fluctuations and band tilting due to fields have an effect on the recombination in InGaN/GaN quantum well.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117121436","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Reliability of BCB passivated InAlAs/InGaAs HEMTs under thermal stress","authors":"D. Kim, M. Yoon, T. Kim, K. Yang","doi":"10.1109/ISCS.2003.1239990","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239990","url":null,"abstract":"InP-based HEMTs have been regarded as promising devices for ultra-high speed applications [I]. For practical system applications, the device reliability is one of the most critical issues. Extensive works have been done on the reliability of AIGaAs/(In)GaAs pHEMTs and InP-based HEMTs [I-21. Recently, the device performance improvement of benzocyclobutene (BCB) passivated GaAs pHEMT has been reported demonstrating the advantages of its low dielectric constant and a low loss tangent of BCB [3]. But, up to date, there has been no report on the reliability study on BCB passivated InP-based HEMTs to our knowledge. In this study, the photosensitiveBCB layer was applied to InAlAsiInGaAs HEMTs for passivation and their thermal reliability characteristics were investigated and compared with the S i N x and polyimidepassivated devices for the first time. The designed HEMT layer structure is shown in Table I. For device fabrication, the mesa was defined by wet chemical etching. For ohmic contacts, AuGeiNiiAu were evaporated and alloyed resulting in a contact resistance of 0.085C2mm The thickness of Ni layer was optimized to have a minimum resistance variation during the thermal stress [4]. The conventional succinic acidHZOz solution was used for mesa-sidewall and gate recess etching. The Schottky gate was formed by evaporation of TUAu metal. The fabricated unpassivated-HEMTs with a 1.2pm gatelength showed good pinch-off characteristics with V, of -0.W and a maximum DC-transconductance g, of 398 mS/mm as shown in Fig. 1. The peak fr and f, measured at Vb=2.5V, estimated 60m -2OdB/decade extrapolation, were 25.7GHz and 53.1GH2, respectively. For fair comparison, the devices having I . , and g, variations within 5% were chosen and passivated by S N X (SiN-HEMT), polyimide (PI-HEMT) and BCB (BCB-HEMT). A 9Onm SiN. was deposited with Si”H,/He gas mixtures using an RPCVD for the SiN-HEMT. For the PIand BCB-HEMT, the polyimide and photosensitive-BCB were spin coated and cured at 200°C during 3Omin in nitrogen atmosphere, respectively. The devices were fmt characterized prior to thermal stressing, and during thermal stressing at 200°C for a period of 1006rs. The devices were not biased and were exposed to air in a closed oven during thermal stress. As shown in Fig. 1, g, is reduced by 5.6% in the BCB-HEMT and that of PI-HEMT is reduced by 4.5% after passivation. Compared to the PIand BCB-HEMT, the g, degadation in the SWHEMT (25%) at a high V, is significant due to the surface modification by the inherent CVD RF damage [5]. In all cases, some degradation of DC-characteristics was observed after passivation due to the increase of access resistance as shown in Fig. 3. Id and g, variation during thermal stress are shown in Fig. 2. Id and degradation of the SiN-HEMT were recovered by stabilition bake [I], whereas the PI-HEMT showed most severe degradation. The BCB-HEMT showed most stable DC-characteristics during thermal stress. In order to investigate the effect on th","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129244670","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Surface reconstructions of InGaAs layers","authors":"J. Millunchick, A. Riposan, B. J. Dall, C. Pearson, B. Orr","doi":"10.1109/ISCS.2003.1239897","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239897","url":null,"abstract":"In this paper, we examined the morphology and surface reconstruction of InGa/sub 1-x/As alloy layers during growth and after annealing. Films of different compositions were grown by molecular beam epitaxy on GaAs and InP(001) substrates to thickness less than the critical thickness for 3D islanding or misfit dislocations formation, and examined using in-situ scanning tunneling microscopy.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129168487","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}