InAs/GaInSb/AlGaAsSb based type-II W-lasers

Abstract

In this paper, we study electrically pumped InAs/GaInSb/AlGaAsSb based type-II W-lasers were grown by solid-source on (100) GaSb:Te substrates, using valved cracker effusion cells for the supply of the group V elements. The active region, composed of typically 5 to 10 repetitions of the InAs/GaInSb/InAs W-building block separated by AlGaAsSb interperiod barriers, is surrounded by AlGaAsSb separate confinement layers forming the core of the optical waveguide with a total thickness of 1.3 /spl mu/m.