Growth characteristics of ZnO nanowires on silicon, sapphire and GaN substrates

H. Hong, T. Seong, Seonghoon Lee
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Abstract

ZnO nanowires have been grown on [001] silicon, c-sapphire and micro-patterned (0001) GaN substrates, which are characterized by scanning electron microscopy, X-ray diffraction, and photoluminescence. It is shown that the crystallinity of the nanowires sensitively depends on the types of the substrates. The ZnO nanowires have good optical and structural properties.
ZnO纳米线在硅、蓝宝石和GaN衬底上的生长特性
ZnO纳米线生长在[001]硅,c-蓝宝石和微图像化(0001)GaN衬底上,并通过扫描电子显微镜,x射线衍射和光致发光对其进行了表征。结果表明,纳米线的结晶度与衬底的类型密切相关。ZnO纳米线具有良好的光学性能和结构性能。
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