Field effect and localization in InGaN/GaN quantum wells

Abstract

In this paper single InGaN quantum wells with GaN barriers were grown by metal organic chemical vapour deposition on sapphire substrates. Time resolved CL measurements performed on single GaN/In/sub 0.13/Ga/sub 0.87/N/GaN quantum wells with d=6 nm and d=8 nm. Using the onset portion of the time delayed spectra we find that both localisation in potential fluctuations and band tilting due to fields have an effect on the recombination in InGaN/GaN quantum well.