Ti/Al/Pt/Au欧姆接触电阻和稳定性对n-ZnO的退火温度依赖性

2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI:10.1109/ISCS.2003.1239937

K. Ip, K. Baik, Y. Heo, D. Norton, S. Pearton, J. LaRoche, B. Luo, F. Ren, J. Zavada

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引用次数: 1

摘要

只提供摘要形式。作者报道了高质量未掺杂(n/spl sim/10/sup 17/ cm/sup -3/) ZnO基体上Ti/Al/Pt/Au触点接触电阻和形貌的退火温度依赖性。采用了两种不同的表面清洁程序，尽管发现一般情况下，接收表面产生的比接触电阻最低。

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Annealing temperature dependence of contact resistance and stability for Ti/Al/Pt/Au ohmic contacts to bulk n-ZnO

Summary form only given. The authors report on the annealing temperature dependence of contact resistance and morphology for Ti/Al/Pt/Au contacts on high-quality, undoped (n/spl sim/10/sup 17/ cm/sup -3/) bulk ZnO substrates. Two different surface cleaning procedures were employed, although it was found that in general the as-received surface produced the lowest specific contact resistances.

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2003 International Symposium on Compound Semiconductors

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