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2003 International Symposium on Compound Semiconductors最新文献

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Room-temperature electroluminescence at 1.3 and 1.5 /spl mu/m from Ge/Si quantum-dot light-emitting diode Ge/Si量子点发光二极管在1.3和1.5 /spl μ m的室温电致发光
2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI: 10.1109/ISCS.2003.1239940
Wen‐Hao Chang, A. Chou, Wen-Yen Chen, Hsiang-Szu Chang, T. Hsu, Z. Pei, P. Chen, S. Lee, L. Lai, S. Lu, M. Tsai
{"title":"Room-temperature electroluminescence at 1.3 and 1.5 /spl mu/m from Ge/Si quantum-dot light-emitting diode","authors":"Wen‐Hao Chang, A. Chou, Wen-Yen Chen, Hsiang-Szu Chang, T. Hsu, Z. Pei, P. Chen, S. Lee, L. Lai, S. Lu, M. Tsai","doi":"10.1109/ISCS.2003.1239940","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239940","url":null,"abstract":"We report RT EL from Ge/Si QD light-emitting diodes (LED). The LEDs were fabricated in mesa-type structure, with silicon oxide layer on the top for surface/side wall passivation. Different passivation processes have been employed. We found that the EL intensities are relatively less sensitive to temperature in the range of 80 to 300 K. At RT, an internal quantum efficiency up to 0.015 % has been achieved.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"83 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115530710","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of surface passivation on breakdown of AlGaN/GaN HEMTs 表面钝化对AlGaN/GaN hemt击穿的影响
2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI: 10.1109/ISCS.2003.1239959
Y. Ohno, T. Nakao, S. Kishimoto, K. Maezawa, T. Mizutani
{"title":"Effect of surface passivation on breakdown of AlGaN/GaN HEMTs","authors":"Y. Ohno, T. Nakao, S. Kishimoto, K. Maezawa, T. Mizutani","doi":"10.1109/ISCS.2003.1239959","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239959","url":null,"abstract":"We have investigated the effect of surface passivation on breakdown by electrical characterization and electroluminescence (EL) measurements of AlGaN/GaN HEMTs.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116417360","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Real-time studies of strain relaxation in InGaAs heteroepitaxy InGaAs异质外延应变弛豫的实时研究
2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI: 10.1109/ISCS.2003.1239896
R. Beresford, C. Lynch, S.-K. Hong, E. Chason
{"title":"Real-time studies of strain relaxation in InGaAs heteroepitaxy","authors":"R. Beresford, C. Lynch, S.-K. Hong, E. Chason","doi":"10.1109/ISCS.2003.1239896","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239896","url":null,"abstract":"The relaxation behavior in InGaAs heteroepitaxy during growth interrupts reveal that at a given dislocation density, the glide velocity can be increased orders of magnitude by the presence of the growth flux. These results are interpreted in terms of adatom enhanced nucleation of single kinks at the growth surface.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116519468","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Characterization and modeling of the anomalous dip in scattering parameter S/sub 11/ of InGaP/GaAs HBTs InGaP/GaAs HBTs散射参数S/sub 11/异常倾角的表征与建模
2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI: 10.1109/ISCS.2003.1239979
Yo‐Sheng Lin, Kun‐Nan Liao, Shey-Shi Lu
{"title":"Characterization and modeling of the anomalous dip in scattering parameter S/sub 11/ of InGaP/GaAs HBTs","authors":"Yo‐Sheng Lin, Kun‐Nan Liao, Shey-Shi Lu","doi":"10.1109/ISCS.2003.1239979","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239979","url":null,"abstract":"In this paper, characterization and modeling of the anomalous dip in S/sub 11/ of InGaP/GaAs HBTs is reported and explained quantitatively for the first time.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"123 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114990215","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Influence of arsenic isoelectronic Co-doping on the electronic properties of n-and p-type GaN 砷等电子共掺杂对n型和p型GaN电子性能的影响
2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI: 10.1109/ISCS.2003.1239919
L. Guido, B. Dickerson, W. Houck, D. T. Gray
{"title":"Influence of arsenic isoelectronic Co-doping on the electronic properties of n-and p-type GaN","authors":"L. Guido, B. Dickerson, W. Houck, D. T. Gray","doi":"10.1109/ISCS.2003.1239919","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239919","url":null,"abstract":"GaN samples were synthesized by OMVPE using TMGa, NH/sub 3/, AsH/sub 3/, SiH/sub 4/ and Cp/sub 2/Mg as precursors, and H/sub 2/ as the carrier gas. Direct comparisons between n-and p-type GaN samples with and without arsenic demonstrate that isoelectronic co-doping yields significant improvements in electronic properties. The surface morphology of both n-and p-type GaN improves considerably with the addition of AsH/sub 3/ into the OMVPE environment.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128322179","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
X-ray diffraction imaging of wide bandgap materials 宽禁带材料的x射线衍射成像
2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI: 10.1109/ISCS.2003.1239881
B. Poust, P. Feichtinger, M. Wójtowicz, R. Sandhu, B. Heying, T. Block, A. Khan, M. Goorsky
{"title":"X-ray diffraction imaging of wide bandgap materials","authors":"B. Poust, P. Feichtinger, M. Wójtowicz, R. Sandhu, B. Heying, T. Block, A. Khan, M. Goorsky","doi":"10.1109/ISCS.2003.1239881","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239881","url":null,"abstract":"We discuss the interpretation of images of /spl alpha/-SiC substrates and GaN layers deposited on SiC using two common variants of diffraction imaging: double crystal (reflection) topography and Lang (transmission) topography. Dependence of image resolution on layer rocking curve breadth is demonstrated, and implication for limitations imposed by thin and defective layers are discussed.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128682941","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Fabrication processes for high performance InAs-based HBTs 高性能inas基hbt的制造工艺
2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI: 10.1109/ISCS.2003.1239963
S. Thomas, A. Arthur, K. Elliot, D. Chow, P. Brewer, R. Rajavel, B. Shi, P. Deelman, C. Fields, M. Madhav
{"title":"Fabrication processes for high performance InAs-based HBTs","authors":"S. Thomas, A. Arthur, K. Elliot, D. Chow, P. Brewer, R. Rajavel, B. Shi, P. Deelman, C. Fields, M. Madhav","doi":"10.1109/ISCS.2003.1239963","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239963","url":null,"abstract":"InAs-based HBT technology was discussed. Several of the available fabrication processes were presented, as well as the device performance obtained from some of the options.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128860398","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Radiation-resistant and high-efficiency InGaP/InGaAs/Ge 3-junction solar cells 耐辐射、高效率的InGaP/InGaAs/Ge三结太阳能电池
2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI: 10.1109/ISCS.2003.1239969
M. Yamaguchi, N. Kojima, A. Khan, T. Takamoto, K. Ando, M. Imaizumi, T. Sumita
{"title":"Radiation-resistant and high-efficiency InGaP/InGaAs/Ge 3-junction solar cells","authors":"M. Yamaguchi, N. Kojima, A. Khan, T. Takamoto, K. Ando, M. Imaizumi, T. Sumita","doi":"10.1109/ISCS.2003.1239969","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239969","url":null,"abstract":"In this paper, radiation-resistant and high-efficiency III-V compound multi-junction (MJ) solar cells are presented. We have proposed wide-bandgap InGaP double hetero (DH) structure tunnel junction for cell interconnection and lattice-matched InGaAs middle cell. A world-record efficiency of 29.2% (AM0, 28/spl deg/C) has been obtained for InGaP/InGaAs/Ge 3-junction solar cells (2x2cm/sup 2/) fabricated by the MOCVD method. Furthermore, radiation effects on multi-junction solar cells have been studied for space applications. The authors have found superior radiation-resistance of InGaP-based MJ-cells and minority-carrier injection-enhanced annealing of radiation-induced defects in InGaP and InGaAsP sub cell materials in addition to those of InP cell materials found previously. We are now demonstrating effectiveness of InGaP-based MJ-cells using the MDS-1 satellite launched on February 4, 2002.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114772466","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
High temperature GaN based Schottky diode gas sensors 高温氮化镓肖特基二极管气体传感器
2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI: 10.1109/ISCS.2003.1239906
F. Ren, J. Kim, B. Gila, C. Abernathy, S. Pearton, A. Baca, R. D. Briggs, G. Chung
{"title":"High temperature GaN based Schottky diode gas sensors","authors":"F. Ren, J. Kim, B. Gila, C. Abernathy, S. Pearton, A. Baca, R. D. Briggs, G. Chung","doi":"10.1109/ISCS.2003.1239906","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239906","url":null,"abstract":"In this paper, high temperature hydrogen gas sensors with GaN and SiC based Schottky diodes were studied using Pd and Pt as Schottky contacts. Here we investigated thermal stability of W and WSi based Schottky metals for high temperature gas sensing. Schottky characteristics were observed for Au/Ti/W/SiC up to 900/spl deg/C annealing.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"302 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134337787","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A simple method to determine strains in InGaNAs/GaAs quantum wells 一种测定InGaNAs/GaAs量子阱中应变的简单方法
2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI: 10.1109/ISCS.2003.1239908
N. Kim, Y. Jang, D. Lee, K. Park, W. Jeong, J.W. Wang
{"title":"A simple method to determine strains in InGaNAs/GaAs quantum wells","authors":"N. Kim, Y. Jang, D. Lee, K. Park, W. Jeong, J.W. Wang","doi":"10.1109/ISCS.2003.1239908","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239908","url":null,"abstract":"We have investigated a series of InGaNAs/GaAs quantum wells grown by MOCVD method at 540/spl deg/C. We estimate the lattice constant of InAsGaN layer by measuring the HH-LH energy splitting. Energy gap is determined by PL peak spectra at room temperature.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133288711","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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