Characterization and modeling of the anomalous dip in scattering parameter S/sub 11/ of InGaP/GaAs HBTs

2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI:10.1109/ISCS.2003.1239979

Yo‐Sheng Lin, Kun‐Nan Liao, Shey-Shi Lu

引用次数: 0

Abstract

In this paper, characterization and modeling of the anomalous dip in S/sub 11/ of InGaP/GaAs HBTs is reported and explained quantitatively for the first time.

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InGaP/GaAs HBTs散射参数S/sub 11/异常倾角的表征与建模

本文首次报道了InGaP/GaAs HBTs的S/sub 11/异常倾角的表征和建模，并对其进行了定量解释。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2003 International Symposium on Compound Semiconductors

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