宽禁带材料的x射线衍射成像

2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI:10.1109/ISCS.2003.1239881

B. Poust, P. Feichtinger, M. Wójtowicz, R. Sandhu, B. Heying, T. Block, A. Khan, M. Goorsky

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引用次数: 1

摘要

我们讨论了使用衍射成像的两种常见变体:双晶(反射)形貌和朗(透射)形貌来解释/spl α /-SiC衬底和沉积在SiC上的GaN层的图像。证明了图像分辨率与层摇曲线宽度的关系，并讨论了薄层和缺陷层所带来的限制。

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X-ray diffraction imaging of wide bandgap materials

We discuss the interpretation of images of /spl alpha/-SiC substrates and GaN layers deposited on SiC using two common variants of diffraction imaging: double crystal (reflection) topography and Lang (transmission) topography. Dependence of image resolution on layer rocking curve breadth is demonstrated, and implication for limitations imposed by thin and defective layers are discussed.

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2003 International Symposium on Compound Semiconductors

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