表面钝化对AlGaN/GaN hemt击穿的影响

Y. Ohno, T. Nakao, S. Kishimoto, K. Maezawa, T. Mizutani
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引用次数: 2

摘要

我们通过电学表征和电致发光(EL)测量研究了表面钝化对AlGaN/GaN hemt击穿的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Effect of surface passivation on breakdown of AlGaN/GaN HEMTs
We have investigated the effect of surface passivation on breakdown by electrical characterization and electroluminescence (EL) measurements of AlGaN/GaN HEMTs.
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