一种测定InGaNAs/GaAs量子阱中应变的简单方法

2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI:10.1109/ISCS.2003.1239908

N. Kim, Y. Jang, D. Lee, K. Park, W. Jeong, J.W. Wang

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引用次数: 1

摘要

我们研究了用MOCVD方法在540/spl度/C下生长的一系列InGaNAs/GaAs量子阱。我们通过测量HH-LH能量分裂来估计InAsGaN层的晶格常数。能隙由室温下的PL峰光谱确定。

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A simple method to determine strains in InGaNAs/GaAs quantum wells

We have investigated a series of InGaNAs/GaAs quantum wells grown by MOCVD method at 540/spl deg/C. We estimate the lattice constant of InAsGaN layer by measuring the HH-LH energy splitting. Energy gap is determined by PL peak spectra at room temperature.

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2003 International Symposium on Compound Semiconductors

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