{"title":"砷等电子共掺杂对n型和p型GaN电子性能的影响","authors":"L. Guido, B. Dickerson, W. Houck, D. T. Gray","doi":"10.1109/ISCS.2003.1239919","DOIUrl":null,"url":null,"abstract":"GaN samples were synthesized by OMVPE using TMGa, NH/sub 3/, AsH/sub 3/, SiH/sub 4/ and Cp/sub 2/Mg as precursors, and H/sub 2/ as the carrier gas. Direct comparisons between n-and p-type GaN samples with and without arsenic demonstrate that isoelectronic co-doping yields significant improvements in electronic properties. The surface morphology of both n-and p-type GaN improves considerably with the addition of AsH/sub 3/ into the OMVPE environment.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Influence of arsenic isoelectronic Co-doping on the electronic properties of n-and p-type GaN\",\"authors\":\"L. Guido, B. Dickerson, W. Houck, D. T. Gray\",\"doi\":\"10.1109/ISCS.2003.1239919\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"GaN samples were synthesized by OMVPE using TMGa, NH/sub 3/, AsH/sub 3/, SiH/sub 4/ and Cp/sub 2/Mg as precursors, and H/sub 2/ as the carrier gas. Direct comparisons between n-and p-type GaN samples with and without arsenic demonstrate that isoelectronic co-doping yields significant improvements in electronic properties. The surface morphology of both n-and p-type GaN improves considerably with the addition of AsH/sub 3/ into the OMVPE environment.\",\"PeriodicalId\":404065,\"journal\":{\"name\":\"2003 International Symposium on Compound Semiconductors\",\"volume\":\"8 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-10-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2003 International Symposium on Compound Semiconductors\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISCS.2003.1239919\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2003 International Symposium on Compound Semiconductors","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISCS.2003.1239919","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Influence of arsenic isoelectronic Co-doping on the electronic properties of n-and p-type GaN
GaN samples were synthesized by OMVPE using TMGa, NH/sub 3/, AsH/sub 3/, SiH/sub 4/ and Cp/sub 2/Mg as precursors, and H/sub 2/ as the carrier gas. Direct comparisons between n-and p-type GaN samples with and without arsenic demonstrate that isoelectronic co-doping yields significant improvements in electronic properties. The surface morphology of both n-and p-type GaN improves considerably with the addition of AsH/sub 3/ into the OMVPE environment.
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