Influence of arsenic isoelectronic Co-doping on the electronic properties of n-and p-type GaN

Abstract

GaN samples were synthesized by OMVPE using TMGa, NH/sub 3/, AsH/sub 3/, SiH/sub 4/ and Cp/sub 2/Mg as precursors, and H/sub 2/ as the carrier gas. Direct comparisons between n-and p-type GaN samples with and without arsenic demonstrate that isoelectronic co-doping yields significant improvements in electronic properties. The surface morphology of both n-and p-type GaN improves considerably with the addition of AsH/sub 3/ into the OMVPE environment.