High temperature GaN based Schottky diode gas sensors

2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI:10.1109/ISCS.2003.1239906

F. Ren, J. Kim, B. Gila, C. Abernathy, S. Pearton, A. Baca, R. D. Briggs, G. Chung

引用次数: 0

Abstract

In this paper, high temperature hydrogen gas sensors with GaN and SiC based Schottky diodes were studied using Pd and Pt as Schottky contacts. Here we investigated thermal stability of W and WSi based Schottky metals for high temperature gas sensing. Schottky characteristics were observed for Au/Ti/W/SiC up to 900/spl deg/C annealing.

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高温氮化镓肖特基二极管气体传感器

本文以Pd和Pt为肖特基触点，研究了氮化镓和碳化硅基肖特基二极管的高温氢气传感器。本文研究了W和WSi基肖特基金属用于高温气敏的热稳定性。Au/Ti/W/SiC在高达900/spl℃的退火条件下观察到肖特基特性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2003 International Symposium on Compound Semiconductors

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