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2003 International Symposium on Compound Semiconductors最新文献

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A reflecting mirror facet (RMF) photodiode suitable for surface-mountable optical package 一种适用于表面贴装光学封装的反射镜面(RMF)光电二极管
2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI: 10.1109/ISCS.2003.1239970
Seungkee Yang, Hwayong Kang, B. Jeon, D. Rhee, A. Choo, Taeil Kim, J. Burm
{"title":"A reflecting mirror facet (RMF) photodiode suitable for surface-mountable optical package","authors":"Seungkee Yang, Hwayong Kang, B. Jeon, D. Rhee, A. Choo, Taeil Kim, J. Burm","doi":"10.1109/ISCS.2003.1239970","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239970","url":null,"abstract":"The Reflecting mirror facet (RMF) photodiodes with two V-grooves and a conventional back-illuminated vertical absorption structure were made for surface mounting and edge illumination applications. The two adjacent V-grooves convert a horizontal beam to nearly a vertical beam. Even with the edge-illuminated structure, RMFPDs showed the high reliability from the buried p-n junction.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115935085","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Transition from induced absorption to saturation of intersubband transitions in GaN/AlGaN quantum well structures GaN/AlGaN量子阱结构中子带间跃迁从诱导吸收到饱和的转变
2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI: 10.1109/ISCS.2003.1239882
Gang Chen, R. Rapaport, C. Gmachl, H. Ng
{"title":"Transition from induced absorption to saturation of intersubband transitions in GaN/AlGaN quantum well structures","authors":"Gang Chen, R. Rapaport, C. Gmachl, H. Ng","doi":"10.1109/ISCS.2003.1239882","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239882","url":null,"abstract":"In this paper, we show that different GaN heterostructures exhibit distinct nonlinear optical response. The response is studied using spectrally integrated pump-probe technique. The intersubband (ISBT) relaxation dynamics of excited carriers in GaN quantum well(QW) structures and their nonlinearities is essential for possible ultrafast optoelectronic applications based on these transitions.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"360 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122774702","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
RM/sup 3/ integration of indium phosphide based 1.55 /spl mu/m p-i-n photodetectors with silicon CMOS optical clock receiver circuits 基于磷化铟的1.55 /spl mu/m p-i-n光电探测器与硅CMOS光时钟接收电路的集成
2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI: 10.1109/ISCS.2003.1239973
E. Atmaca, N. Drego, D. Boning, C. Fonstad, L. W. Khai, Y. S. Fatt
{"title":"RM/sup 3/ integration of indium phosphide based 1.55 /spl mu/m p-i-n photodetectors with silicon CMOS optical clock receiver circuits","authors":"E. Atmaca, N. Drego, D. Boning, C. Fonstad, L. W. Khai, Y. S. Fatt","doi":"10.1109/ISCS.2003.1239973","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239973","url":null,"abstract":"Describes the development of an RM/sup 3/ technique, Aligned pillar bonding (APB), and its application to optical clock distribution. APB integrates lattice mismatched materials using aligned, selective area wafer bonding at reduced temperature (around 300/spl deg/C), which protects the electronic chips from the adverse effects of high temperatures, and reduces the thermal expansion mismatch concerns.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122699751","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Frequency and breakdown properties of AlGaN/GaN HEMTs AlGaN/GaN hemt的频率和击穿特性
2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI: 10.1109/ISCS.2003.1239902
A. Vertiatchikh, W. Schaff, L. Eastman
{"title":"Frequency and breakdown properties of AlGaN/GaN HEMTs","authors":"A. Vertiatchikh, W. Schaff, L. Eastman","doi":"10.1109/ISCS.2003.1239902","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239902","url":null,"abstract":"AlGaN/GaN heterostructure transistors show potential in high-frequency high-power applications because of their high breakdown voltages and high electron saturation velocities. The operating drain voltage, limiting the maximum RF output power, should be lower than breakdown voltage of the device. The frequency and breakdown properties of the AlGaN/GaN heterostructure transistors have been studied.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"147 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124810690","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Growth of InN and InGaN on Si substrate for solar cell applications 太阳能电池用硅衬底上的InN和InGaN生长
2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI: 10.1109/ISCS.2003.1239880
T. Yamaguchi, C. Morioka, K. Mizuo, M. Hori, T. Araki, A. Suzuki, Y. Nanishi
{"title":"Growth of InN and InGaN on Si substrate for solar cell applications","authors":"T. Yamaguchi, C. Morioka, K. Mizuo, M. Hori, T. Araki, A. Suzuki, Y. Nanishi","doi":"10.1109/ISCS.2003.1239880","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239880","url":null,"abstract":"In this paper InN and InGaN films were grown on Si substrates by RF-MBE. Single crystalline InN films were realized on Si by performing brief substrate nitridation for 3 min. The substrate was effective for the growth of InGaN. The peak in PL spectra at 77K for all InN films appeared at only approximately 0.8 eV. We obtained rectifying characteristics in n-InN/P-Si heterostructure. Thus, the possibility as new harmless solar cell application of nitride semiconductors was experimentally demonstrated for the first time.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126122042","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Backside-emitter-structure C-up GaAs HBTs for small power amplifiers 用于小功率放大器的后置发射体结构C-up GaAs hbt
2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI: 10.1109/ISCS.2003.1239975
K. Mochizuki, K. Tanaka, C. Takubo, H. Matsumoto, T. Tanoue, I. Ohbu
{"title":"Backside-emitter-structure C-up GaAs HBTs for small power amplifiers","authors":"K. Mochizuki, K. Tanaka, C. Takubo, H. Matsumoto, T. Tanoue, I. Ohbu","doi":"10.1109/ISCS.2003.1239975","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239975","url":null,"abstract":"In this paper, we have successfully fabricated ballast-free HBTs with L of 15 /spl mu/m and V/sub ce,.sat/ of 0.01 V by employing a backside-emitter-structure collector-up (C-up) configuration with ohmic collector contacts. Preliminary results on performance of these HBTs show their strong potential for application in small and highly efficient PA MMICs.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128971800","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Bipolar cascade lasers at emitting wavelengths near 2 /spl mu/m 发射波长接近2 /spl μ m的双极级联激光器
2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI: 10.1109/ISCS.2003.1239991
R.Q. Yang, Y. Qiu
{"title":"Bipolar cascade lasers at emitting wavelengths near 2 /spl mu/m","authors":"R.Q. Yang, Y. Qiu","doi":"10.1109/ISCS.2003.1239991","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239991","url":null,"abstract":"Near-IR bipolar cascade lasers have recently been investigated [l-51 for some potential advantages such as high output power and increased quantum efficiency compared to conventional diode lasers. A quantum efficiency that may be greater than unity was explicitly pointed out by van der Ziel and Tsang two decades ago [6] when they studied monolithic integrated GaAs diode lasers with tunnel junctions. In this work, we investigate a bipolar cascade laser in the wavelength region of near 2 pm. This wavelength region is important for chemical sensing and wind profile lidar.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132754272","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Laser direct write for wide-band gap semiconductor device fabrication: doping 用于宽带隙半导体器件制造的激光直接写入:掺杂
2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI: 10.1109/ISCS.2003.1239926
I. Salama, N. Quick, A. Kar
{"title":"Laser direct write for wide-band gap semiconductor device fabrication: doping","authors":"I. Salama, N. Quick, A. Kar","doi":"10.1109/ISCS.2003.1239926","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239926","url":null,"abstract":"Wide-band gap semiconductor materials promise superior operational voltages, temperatures and frequencies compared to those of silicon. A new and simple process based on laser induced phase transformations is formed as a solution to wide-bandgap material integration issues caused by incompatibilities with conventional dielectric deposition, etching, oxidation, metallization and doping technologies. Laser coupling with wide-bandgap semiconductors selectively converts irradiated regions to conductors, semiconductors or insulators. In this process metallization for drains, sources, interconnects, vias and contacts is intrinsic, without the addition of metals and doping is accomplished using primarily gaseous dopant sources. Laser doping of 4H-SiC is described in this paper.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131146017","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A comparison of dry plasma and wet chemical passivation of GaSb photodiodes GaSb光电二极管干等离子体和湿化学钝化的比较
2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI: 10.1109/ISCS.2003.1239964
V. Bhagwat, J. Langer, I. Bhat, P. Dutta, T. Refaat, M. Abedin
{"title":"A comparison of dry plasma and wet chemical passivation of GaSb photodiodes","authors":"V. Bhagwat, J. Langer, I. Bhat, P. Dutta, T. Refaat, M. Abedin","doi":"10.1109/ISCS.2003.1239964","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239964","url":null,"abstract":"In this paper, the effect of ammonium sulfide passivation on the wet etched sample is reported. The device performance in terms of leakage current breakdown voltage, zero bias resistance area product and responsivity for the diodes is reviewed.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123202389","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
AlGaN-GaN HEMTs: material, device, circuit technology and applications gan - gan hemt:材料、器件、电路技术及应用
2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI: 10.1109/ISCS.2003.1239957
P. Parikh, Y. Wu, P. Chavarkar, M. Moore, U. Mishra, S. Sheppard, R.P. Smith, A. Saxler, J. Duc, W. Pribble, J. Milligan, J. Palmour
{"title":"AlGaN-GaN HEMTs: material, device, circuit technology and applications","authors":"P. Parikh, Y. Wu, P. Chavarkar, M. Moore, U. Mishra, S. Sheppard, R.P. Smith, A. Saxler, J. Duc, W. Pribble, J. Milligan, J. Palmour","doi":"10.1109/ISCS.2003.1239957","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239957","url":null,"abstract":"In this paper recent progress in material, device and circuit technology of GaN based HEMT is discussed. We have also developed GaN HEMT hybrid amplifiers as well as MMICs, including air wedge and MIMC capacitors and resistors.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"173 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121308343","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
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