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2003 International Symposium on Compound Semiconductors最新文献

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Determination of GaAs/GaAsSb heterojunction conduction band offset GaAs/GaAsSb异质结导带偏移的测定
2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI: 10.1109/ISCS.2003.1239983
J. Wang, S. Johnson, C. Z. Guo, S. Chaparro, J. Gupta, Y. Sadofyev, Y. Cao, N. Samal, X. Jin, S. Yu, D. Ding, Y. Zhang
{"title":"Determination of GaAs/GaAsSb heterojunction conduction band offset","authors":"J. Wang, S. Johnson, C. Z. Guo, S. Chaparro, J. Gupta, Y. Sadofyev, Y. Cao, N. Samal, X. Jin, S. Yu, D. Ding, Y. Zhang","doi":"10.1109/ISCS.2003.1239983","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239983","url":null,"abstract":"J.-B. Wang', S. R. Johnsm', C. Z. &ob, S. A. chaparro', J. A. Gupta', Yu. G Sadofye$, Y. Cao', N. Samal', X. Jin', S.-Q. Yu', D. Ding', Y.-H. Zhanga 'Dept. of Electrical Engineering & Cntr. for Solid State Electronics Research, Arizona State University, Tempe, AZ 85287, USA bDepartment of Physics, Peking University, Beijing 100871, P. R China 'Institute for Microstluctural Sciences, National Research Council Canada, Ottawa, KIA OR6, Canada","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"140 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114509859","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effects of device design on the thermal properties of InP-based HBTs 器件设计对inp基HBTs热性能的影响
2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI: 10.1109/ISCS.2003.1239977
James Chingwei Li, Peter M. Asbeck, Marko Sokolich, Tahir Hussain, D. Hitko, Charles H. Fields
{"title":"Effects of device design on the thermal properties of InP-based HBTs","authors":"James Chingwei Li, Peter M. Asbeck, Marko Sokolich, Tahir Hussain, D. Hitko, Charles H. Fields","doi":"10.1109/ISCS.2003.1239977","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239977","url":null,"abstract":"The authors study the effects of thermal resistance in InP-based HBTs with different vertical and lateral design. 3D simulations and measurement results illustrate that significant differences in thermal resistance can arise with relatively small changes in device structure. These results also highlight the significant thermal gradients within the transistor.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123793057","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 17
Selective growth of InAs quantum dots on patterned GaAs substrate by metal-organic chemical vapor deposition 金属有机化学气相沉积法在图像化砷化镓衬底上选择性生长InAs量子点
2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI: 10.1109/ISCS.2003.1239923
T. Hsieh, P. Chiu, Yu-Chuan Liu, N. Yeh, W. Ho, J. Chyi
{"title":"Selective growth of InAs quantum dots on patterned GaAs substrate by metal-organic chemical vapor deposition","authors":"T. Hsieh, P. Chiu, Yu-Chuan Liu, N. Yeh, W. Ho, J. Chyi","doi":"10.1109/ISCS.2003.1239923","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239923","url":null,"abstract":"In this paper, we demonstrate quantum dots (QDs) on nano-scale mesa using wet chemical etching and epitaxial growth process on Si-doped GaAs substrates.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115295208","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Scattering limitations on electron transit velocity in AlGaN/GaN HEMTs AlGaN/GaN hemt中电子传递速度的散射限制
2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI: 10.1109/ISCS.2003.1239958
L. Eastman, A. Matulionis, A. Vertiatchikh
{"title":"Scattering limitations on electron transit velocity in AlGaN/GaN HEMTs","authors":"L. Eastman, A. Matulionis, A. Vertiatchikh","doi":"10.1109/ISCS.2003.1239958","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239958","url":null,"abstract":"The authors show that the high field electron transit velocity in normal AlGaN/GaN HEMTs is only about a half of the highest value obtained under ideal conditions. The investigation of structures with AlN interbarrier, demonstrate new potentials for control and minimization of the effects caused by the electron deconfinement and the build-up of non-equilibrium longitudinal optical phonons and an increase in the drift velocity and in the response frequency.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122436252","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
One dimensional heterostructures and resonant tunneling in III-V nanowires III-V纳米线的一维异质结构和共振隧道
2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI: 10.1109/ISCS.2003.1239951
C. Thelander, B. Ohlsson, M. Bjork, T. Mårtensson, A. Persson, K. Deppert, M. Larsson, L. Wallenberg, L. Samuelson
{"title":"One dimensional heterostructures and resonant tunneling in III-V nanowires","authors":"C. Thelander, B. Ohlsson, M. Bjork, T. Mårtensson, A. Persson, K. Deppert, M. Larsson, L. Wallenberg, L. Samuelson","doi":"10.1109/ISCS.2003.1239951","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239951","url":null,"abstract":"We use a bottom-up approach to grow epitaxially nucleated semiconductor nanowires from gold particles. Heterostructure barriers of InP are introduced inside InAs nanowires to form resonant tunneling diodes and single-electron transistors.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116260888","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Catalyst-free GaAs nanowires grown by MBE MBE生长的无催化剂砷化镓纳米线
2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI: 10.1109/ISCS.2003.1239952
V. Gambin, T. Stark, A. Cavus, D. Mensa, M. Lange, T. Block
{"title":"Catalyst-free GaAs nanowires grown by MBE","authors":"V. Gambin, T. Stark, A. Cavus, D. Mensa, M. Lange, T. Block","doi":"10.1109/ISCS.2003.1239952","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239952","url":null,"abstract":"Devices based on self-assembled III-V nanowires have novel applications in nano-photonics and electronics due to their reduced-dimensional nature. Many materials have been used to form nanowires, including Si, Ge, InP, GaAs, GaP, GaN, and ZnO. In this work, GaAs nanowires were grown on lithographically defined, Si/sub x/N/sub 1-x/ coated, InP substrates using solid source MBE. Crystalline and defect structures were analyzed using cross-section high-resolution transmission electron microscopy (HRTEM).","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"109 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121775148","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Electrical and optical properties of carbon-related defects in GaN 氮化镓中碳相关缺陷的电学和光学性质
2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI: 10.1109/ISCS.2003.1239904
R. Armitage, Qing Yang, E. Weber, Z. Fang, S. Hautakangas, K. Saarinen
{"title":"Electrical and optical properties of carbon-related defects in GaN","authors":"R. Armitage, Qing Yang, E. Weber, Z. Fang, S. Hautakangas, K. Saarinen","doi":"10.1109/ISCS.2003.1239904","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239904","url":null,"abstract":"The electrical and optical properties of carbon-related defects in GaN are studied. A series of samples with C concentrations varying from 5x10/sup 16/ to 1x10/sup 20/cm/sup -3/was characterized by SIMS, resistivity, photoluminescence, thermally simulated current, Raman scattering, and positron annihilation spectroscopy.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121962130","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Origin and length scale of carrier localisation in GaInAsN analysed by transmission electron microscopy 透射电镜分析了GaInAsN载流子定位的来源和长度尺度
2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI: 10.1109/ISCS.2003.1239907
M. Albrecht, T. Remmele, V. Grillo, H. Strunk, A. Kaschner, Á. Hoffmann, A. Egorov, H. Riechert
{"title":"Origin and length scale of carrier localisation in GaInAsN analysed by transmission electron microscopy","authors":"M. Albrecht, T. Remmele, V. Grillo, H. Strunk, A. Kaschner, Á. Hoffmann, A. Egorov, H. Riechert","doi":"10.1109/ISCS.2003.1239907","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239907","url":null,"abstract":"In this article, the optical and structural analysis of carrier localisation in InGaAsN quantum wells is described. Cathodoluminescence, carrier localisation in GaInAsN layers were analysed by transmission electron microscopy. GaInAsN layers have been grown by molecular beam epitaxy.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126551218","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
InAs quantum dots infrared photodetectors 量子点红外探测器
2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI: 10.1109/ISCS.2003.1239938
Zhengmao Ye, J. Campbell, Zhonghui Chen, E.T. Kim, A. Madhukar
{"title":"InAs quantum dots infrared photodetectors","authors":"Zhengmao Ye, J. Campbell, Zhonghui Chen, E.T. Kim, A. Madhukar","doi":"10.1109/ISCS.2003.1239938","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239938","url":null,"abstract":"In this paper, we present a study of a series of InAs quantum dot infrared photodetectors (QDIPs) with unintentionally doped active regions. The wavelength tunability will be demonstrated by changes of the content of In and Al in the InGaAs cap layers and InAlGaAs lateral potential confinement layers. The samples were grown on semi-insulating GaAs(001) substrates by solid-source molecular beam epitaxy (MBE). Fourier transformation infrared (FTIR) spectroscopy measurement demonstrated peak photoresponses at the wavelength ranging from /spl sim/ 5.6 /spl mu/m to /spl sim/ 9 /spl mu/m. The dark current and noise of the QDIP samples were measured at various temperature.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125833251","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
GaN nano epitaxial lateral overgrowth on holographically patterned 全息图像化GaN纳米外延横向过度生长
2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI: 10.1109/ISCS.2003.1239889
Dong-Ho Kim, Jaehoon Kim, Chi-o Cho, H. Jeon
{"title":"GaN nano epitaxial lateral overgrowth on holographically patterned","authors":"Dong-Ho Kim, Jaehoon Kim, Chi-o Cho, H. Jeon","doi":"10.1109/ISCS.2003.1239889","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239889","url":null,"abstract":"We have studied nano-scale GaN epitaxial lateral overgrowth on a SiO/sub 2/ mask layer containing two-dimensional nano-holes. Under a proper growth condition, we successfully grew a planar GaN film on such a nano-patterned substrate without generating voids.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133540719","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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