{"title":"AlGaN/GaN hemt中电子传递速度的散射限制","authors":"L. Eastman, A. Matulionis, A. Vertiatchikh","doi":"10.1109/ISCS.2003.1239958","DOIUrl":null,"url":null,"abstract":"The authors show that the high field electron transit velocity in normal AlGaN/GaN HEMTs is only about a half of the highest value obtained under ideal conditions. The investigation of structures with AlN interbarrier, demonstrate new potentials for control and minimization of the effects caused by the electron deconfinement and the build-up of non-equilibrium longitudinal optical phonons and an increase in the drift velocity and in the response frequency.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"33 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Scattering limitations on electron transit velocity in AlGaN/GaN HEMTs\",\"authors\":\"L. Eastman, A. Matulionis, A. Vertiatchikh\",\"doi\":\"10.1109/ISCS.2003.1239958\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The authors show that the high field electron transit velocity in normal AlGaN/GaN HEMTs is only about a half of the highest value obtained under ideal conditions. The investigation of structures with AlN interbarrier, demonstrate new potentials for control and minimization of the effects caused by the electron deconfinement and the build-up of non-equilibrium longitudinal optical phonons and an increase in the drift velocity and in the response frequency.\",\"PeriodicalId\":404065,\"journal\":{\"name\":\"2003 International Symposium on Compound Semiconductors\",\"volume\":\"33 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-10-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2003 International Symposium on Compound Semiconductors\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISCS.2003.1239958\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2003 International Symposium on Compound Semiconductors","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISCS.2003.1239958","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Scattering limitations on electron transit velocity in AlGaN/GaN HEMTs
The authors show that the high field electron transit velocity in normal AlGaN/GaN HEMTs is only about a half of the highest value obtained under ideal conditions. The investigation of structures with AlN interbarrier, demonstrate new potentials for control and minimization of the effects caused by the electron deconfinement and the build-up of non-equilibrium longitudinal optical phonons and an increase in the drift velocity and in the response frequency.
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