InAs quantum dots infrared photodetectors

Abstract

In this paper, we present a study of a series of InAs quantum dot infrared photodetectors (QDIPs) with unintentionally doped active regions. The wavelength tunability will be demonstrated by changes of the content of In and Al in the InGaAs cap layers and InAlGaAs lateral potential confinement layers. The samples were grown on semi-insulating GaAs(001) substrates by solid-source molecular beam epitaxy (MBE). Fourier transformation infrared (FTIR) spectroscopy measurement demonstrated peak photoresponses at the wavelength ranging from /spl sim/ 5.6 /spl mu/m to /spl sim/ 9 /spl mu/m. The dark current and noise of the QDIP samples were measured at various temperature.