Electrical and optical properties of carbon-related defects in GaN

2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI:10.1109/ISCS.2003.1239904

R. Armitage, Qing Yang, E. Weber, Z. Fang, S. Hautakangas, K. Saarinen

引用次数: 0

Abstract

The electrical and optical properties of carbon-related defects in GaN are studied. A series of samples with C concentrations varying from 5x10/sup 16/ to 1x10/sup 20/cm/sup -3/was characterized by SIMS, resistivity, photoluminescence, thermally simulated current, Raman scattering, and positron annihilation spectroscopy.

查看原文本刊更多论文

氮化镓中碳相关缺陷的电学和光学性质

研究了氮化镓中碳相关缺陷的电学和光学性质。用SIMS、电阻率、光致发光、热模拟电流、拉曼散射和正电子湮没光谱对C浓度从5 × 10/sup 16/到1 × 10/sup 20/cm/sup -3/的样品进行了表征。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊