C. Thelander, B. Ohlsson, M. Bjork, T. Mårtensson, A. Persson, K. Deppert, M. Larsson, L. Wallenberg, L. Samuelson
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One dimensional heterostructures and resonant tunneling in III-V nanowires
We use a bottom-up approach to grow epitaxially nucleated semiconductor nanowires from gold particles. Heterostructure barriers of InP are introduced inside InAs nanowires to form resonant tunneling diodes and single-electron transistors.
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