Catalyst-free GaAs nanowires grown by MBE

Abstract

Devices based on self-assembled III-V nanowires have novel applications in nano-photonics and electronics due to their reduced-dimensional nature. Many materials have been used to form nanowires, including Si, Ge, InP, GaAs, GaP, GaN, and ZnO. In this work, GaAs nanowires were grown on lithographically defined, Si/sub x/N/sub 1-x/ coated, InP substrates using solid source MBE. Crystalline and defect structures were analyzed using cross-section high-resolution transmission electron microscopy (HRTEM).