透射电镜分析了GaInAsN载流子定位的来源和长度尺度

2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI:10.1109/ISCS.2003.1239907

M. Albrecht, T. Remmele, V. Grillo, H. Strunk, A. Kaschner, Á. Hoffmann, A. Egorov, H. Riechert

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引用次数: 0

摘要

本文描述了InGaAsN量子阱中载流子局域化的光学和结构分析。透射电镜分析了GaInAsN层的阴极发光和载流子定位。采用分子束外延法生长了GaInAsN层。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Origin and length scale of carrier localisation in GaInAsN analysed by transmission electron microscopy

In this article, the optical and structural analysis of carrier localisation in InGaAsN quantum wells is described. Cathodoluminescence, carrier localisation in GaInAsN layers were analysed by transmission electron microscopy. GaInAsN layers have been grown by molecular beam epitaxy.

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2003 International Symposium on Compound Semiconductors

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