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2003 International Symposium on Compound Semiconductors最新文献

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Low threshold, CW, room temperature 1.49 /spl mu/m GaAs-based lasers 低阈值，连续波，室温1.49 /spl mu/m gaas基激光器
2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI: 10.1109/ISCS.2003.1239913
S. Bank, M. Wistey, H. Yuen, L. Goddard, J. Harris
{"title":"Low threshold, CW, room temperature 1.49 /spl mu/m GaAs-based lasers","authors":"S. Bank, M. Wistey, H. Yuen, L. Goddard, J. Harris","doi":"10.1109/ISCS.2003.1239913","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239913","url":null,"abstract":"We present, for the first time, a CW 1.5 /spl mu/m range GaInNAs(Sb) laser with threshold current density comparable to 1.3 /spl mu/m range GaInNAs laser. The lasers used in this study were conventional ridge waveguide devices. The devices were grown by solid source molecular beam epitaxy (MBE) with nitrogen supplied rf plasma cell. The active region was nominally based on a QW with room temperature (RT) photoluminescence (PL) at 1.43 /spl mu/m and line width of 29.7 meV.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"97 7","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113954425","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Toward III-N /spl lambda/-cavity vertical emitters: heteroepitaxy of GaN and AlN 面向III-N /spl λ /-腔垂直发射体:GaN和AlN的异质外延
2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI: 10.1109/ISCS.2003.1239887
M. Gherasimova, G. Cui, J. Su, Jung Han, E. Makarona, Hongbo Peng, Yiping He, A. Nurmikko
{"title":"Toward III-N /spl lambda/-cavity vertical emitters: heteroepitaxy of GaN and AlN","authors":"M. Gherasimova, G. Cui, J. Su, Jung Han, E. Makarona, Hongbo Peng, Yiping He, A. Nurmikko","doi":"10.1109/ISCS.2003.1239887","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239887","url":null,"abstract":"We study the initial nucleation and evolution of strain relaxation during the alternating growth of AlN on GaN and GaN on AlN by MOCVD. Emphasis is given to the evolution of strained nucleation from a few monolayers up to a quarter of wavelength for DBR application. It is found that the AFM morphology of AlN (/spl sim/300 A) depends sensitively on V/III ratios, ranging from large 3D island/platelets (under a high V/III ratio), to two-dimensional step flow mode (V/III ratio) with distinct macroscopic cracks, to the occurence of microscopic cracks (under a very low V/III ratio) accompanied by a reduction of the macroscopic cracks. GaN on AlN exhibited a strong tendency for 3D islanding.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116032446","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Transient processes and optical spectra in self-assembled quantum dots 自组装量子点的瞬态过程和光谱
2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI: 10.1109/ISCS.2003.1239924
K. Král, P. Zdenek, Z. Khás
{"title":"Transient processes and optical spectra in self-assembled quantum dots","authors":"K. Král, P. Zdenek, Z. Khás","doi":"10.1109/ISCS.2003.1239924","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239924","url":null,"abstract":"Recent development is reported in the theoretical interpretation of the optical spectra and transient processes of self-assembled quantum dot samples. Attention is paid to the effects due to electron-LO phonon interaction in quantum dots. The transport equation are formulated with help of nonequilibrium Green's functions.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"124 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116316129","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Multiline photoluminescence spectra of lattice-matched GaAs/AlGaAs quantum dots 晶格匹配GaAs/AlGaAs量子点的多线光致发光光谱
2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI: 10.1109/ISCS.2003.1239953
K. Ikeda, M. Yamagiwa, F. Minami, N. Koguchi
{"title":"Multiline photoluminescence spectra of lattice-matched GaAs/AlGaAs quantum dots","authors":"K. Ikeda, M. Yamagiwa, F. Minami, N. Koguchi","doi":"10.1109/ISCS.2003.1239953","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239953","url":null,"abstract":"We present experimental results showing that the spectral width of optical transition, especially of exciton transitions, is narrow enough in lattice-matched GaAs/AlGaAs QDs, and the multi-line emission spectrum is due to optical confined exciton multiplexes.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131908026","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Microstructure of In/sub x/Ga/sub 1-x/N thick epitaxial layers In/sub x/Ga/sub 1-x/N厚外延层的微观结构
2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI: 10.1109/ISCS.2003.1239879
L. Geng, S. Srinivasan, R. Liu, B. Jiang, H. Omiya, F. Ponce
{"title":"Microstructure of In/sub x/Ga/sub 1-x/N thick epitaxial layers","authors":"L. Geng, S. Srinivasan, R. Liu, B. Jiang, H. Omiya, F. Ponce","doi":"10.1109/ISCS.2003.1239879","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239879","url":null,"abstract":"0.1/spl mu/m thick In/sub x/Ga/sub 1-x/N epitaxial layers were grown by metal organic chemical vapor deposition on undoped GaN. GaN layers were /spl sim/2.7/spl mu/m thick and were grown on c-plane sapphire using low-temperature GaN buffer layers. Convergent-beam electron diffraction (CBED) was used to observe the local strain and dislocation density. The indium concentration of the In/sub x/Ga/sub 1-x/N was measured by Rutherford backscattering spectrometry (RBS). Using scanning electron microscopy and transmission electron microscopy In/sub x/Ga/sub 1-x/N layers cathodoluminescence spectra were studied.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129485651","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optical and electrical manipulation of spin orientation in compound semiconductors 复合半导体中自旋取向的光学和电学操作
2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI: 10.1109/ISCS.2003.1239883
M. Flatté, W. Lau, C. Pryor, I. Tifrea
{"title":"Optical and electrical manipulation of spin orientation in compound semiconductors","authors":"M. Flatté, W. Lau, C. Pryor, I. Tifrea","doi":"10.1109/ISCS.2003.1239883","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239883","url":null,"abstract":"We describe how optical pulses and gate voltages could be used instead of magnetic fields to orient, manipulate, and decohere spins in compound semiconductors. Device proposals based on these phenomena include the magnetic bipolar transistor.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129238896","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electron effective mass of Ga/sub 0.7/In/sub 0.3/N/sub x/As/sub 1-x/ 电子有效质量Ga/sub 0.7/In/sub 0.3/N/sub x/As/sub 1-x/
2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI: 10.1109/ISCS.2003.1239914
M. Kondow, S. Fujisaki, S. Shirakata, T. Ikari, T. Kitatani
{"title":"Electron effective mass of Ga/sub 0.7/In/sub 0.3/N/sub x/As/sub 1-x/","authors":"M. Kondow, S. Fujisaki, S. Shirakata, T. Ikari, T. Kitatani","doi":"10.1109/ISCS.2003.1239914","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239914","url":null,"abstract":"The electron effective mass of GaInNAs is important to design excellent long-wavelength lasers on GaAs. However, it remains still unestablished. We find that it is 0.08/spl plusmn/0.1 m0 almost independent of nitrogen content from 0.3 to 1.5%.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123282283","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Ion implanted InP and InGaAs for ultrafast optoelectronic applications 离子注入InP和InGaAs用于超快光电应用
2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI: 10.1109/ISCS.2003.1239972
S. Marcinkevičius, C. Carmody, A. Gaarder, H. Tan, C. Jagadish
{"title":"Ion implanted InP and InGaAs for ultrafast optoelectronic applications","authors":"S. Marcinkevičius, C. Carmody, A. Gaarder, H. Tan, C. Jagadish","doi":"10.1109/ISCS.2003.1239972","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239972","url":null,"abstract":"Even though low-temperature growth allows one to obtain InP and InGaAs layers with short electron lifetimes, these layers are hardly applicable for ultrafast optoelectronic devices because of the low resistivity. Therefore, to produce layers with ultrashort carrier lifetimes and high resistivity, other methods should be employed. Here we explore an alternative technique, namely, heavy ion implantation, which has proved to be a viable alternative to the LT growth, at least in the case of GaAs.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"197 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123345689","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Epitaxial growth of InN on GaN by metalorganic chemical vapor deposition 金属有机化学气相沉积法在GaN上外延生长InN
2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI: 10.1109/ISCS.2003.1239905
Hui-chan Seo, Hyun Jin Kim, H. Na, Soon‐Yong Kwon, H. Kim, Y. Shin, Keon-Hun Lee, H. Cheong, E. Yoon
{"title":"Epitaxial growth of InN on GaN by metalorganic chemical vapor deposition","authors":"Hui-chan Seo, Hyun Jin Kim, H. Na, Soon‐Yong Kwon, H. Kim, Y. Shin, Keon-Hun Lee, H. Cheong, E. Yoon","doi":"10.1109/ISCS.2003.1239905","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239905","url":null,"abstract":"We grew InN epilayers on GaN by metalorganic chemical vapor deposition (MOCVD) and characterized the optical and structural properties of InN. Crystal structure and surface morphology were characterized by scanning electron microscopy (SEM) and X-ray diffraction (XRD). Optical properties were measured by photoluminescence (PL).","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"24 6","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113931741","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Characterization techniques for high-mobility strained Si CMOS 高迁移率应变Si CMOS表征技术
2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI: 10.1109/ISCS.2003.1239966
S. Zollner, Ran Liu, Q. Xie, M. Canonico, Shifeng Lu, M. Kottke, Xiangdong Wang, A. Volinsky, M. Sadaka, T. White, A. Barr, S. Thomas, B. Nguyen, C. Cook
{"title":"Characterization techniques for high-mobility strained Si CMOS","authors":"S. Zollner, Ran Liu, Q. Xie, M. Canonico, Shifeng Lu, M. Kottke, Xiangdong Wang, A. Volinsky, M. Sadaka, T. White, A. Barr, S. Thomas, B. Nguyen, C. Cook","doi":"10.1109/ISCS.2003.1239966","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239966","url":null,"abstract":"This paper discusses critical characterization techniques for strained Si technology, especially to determine the strain state, thickness, and Ge content in the underlying Si/sub 1-x/Ge/sub x/ alloy pseudosubstrate.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"112 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131108069","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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