金属有机化学气相沉积法在GaN上外延生长InN

2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI:10.1109/ISCS.2003.1239905

Hui-chan Seo, Hyun Jin Kim, H. Na, Soon‐Yong Kwon, H. Kim, Y. Shin, Keon-Hun Lee, H. Cheong, E. Yoon

{"title":"金属有机化学气相沉积法在GaN上外延生长InN","authors":"Hui-chan Seo, Hyun Jin Kim, H. Na, Soon‐Yong Kwon, H. Kim, Y. Shin, Keon-Hun Lee, H. Cheong, E. Yoon","doi":"10.1109/ISCS.2003.1239905","DOIUrl":null,"url":null,"abstract":"We grew InN epilayers on GaN by metalorganic chemical vapor deposition (MOCVD) and characterized the optical and structural properties of InN. Crystal structure and surface morphology were characterized by scanning electron microscopy (SEM) and X-ray diffraction (XRD). Optical properties were measured by photoluminescence (PL).","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"24 6","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Epitaxial growth of InN on GaN by metalorganic chemical vapor deposition\",\"authors\":\"Hui-chan Seo, Hyun Jin Kim, H. Na, Soon‐Yong Kwon, H. Kim, Y. Shin, Keon-Hun Lee, H. Cheong, E. Yoon\",\"doi\":\"10.1109/ISCS.2003.1239905\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We grew InN epilayers on GaN by metalorganic chemical vapor deposition (MOCVD) and characterized the optical and structural properties of InN. Crystal structure and surface morphology were characterized by scanning electron microscopy (SEM) and X-ray diffraction (XRD). Optical properties were measured by photoluminescence (PL).\",\"PeriodicalId\":404065,\"journal\":{\"name\":\"2003 International Symposium on Compound Semiconductors\",\"volume\":\"24 6\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-10-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2003 International Symposium on Compound Semiconductors\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISCS.2003.1239905\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2003 International Symposium on Compound Semiconductors","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISCS.2003.1239905","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

采用金属有机化学气相沉积(MOCVD)的方法在GaN上生长了InN薄膜，并对其光学和结构特性进行了表征。采用扫描电子显微镜(SEM)和x射线衍射仪(XRD)对晶体结构和表面形貌进行了表征。通过光致发光(PL)测定了其光学性质。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Epitaxial growth of InN on GaN by metalorganic chemical vapor deposition

We grew InN epilayers on GaN by metalorganic chemical vapor deposition (MOCVD) and characterized the optical and structural properties of InN. Crystal structure and surface morphology were characterized by scanning electron microscopy (SEM) and X-ray diffraction (XRD). Optical properties were measured by photoluminescence (PL).

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2003 International Symposium on Compound Semiconductors

自引率

0.00%

发文量