S. Bank, M. Wistey, H. Yuen, L. Goddard, J. Harris
{"title":"低阈值，连续波，室温1.49 /spl mu/m gaas基激光器","authors":"S. Bank, M. Wistey, H. Yuen, L. Goddard, J. Harris","doi":"10.1109/ISCS.2003.1239913","DOIUrl":null,"url":null,"abstract":"We present, for the first time, a CW 1.5 /spl mu/m range GaInNAs(Sb) laser with threshold current density comparable to 1.3 /spl mu/m range GaInNAs laser. The lasers used in this study were conventional ridge waveguide devices. The devices were grown by solid source molecular beam epitaxy (MBE) with nitrogen supplied rf plasma cell. The active region was nominally based on a QW with room temperature (RT) photoluminescence (PL) at 1.43 /spl mu/m and line width of 29.7 meV.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"97 7","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Low threshold, CW, room temperature 1.49 /spl mu/m GaAs-based lasers\",\"authors\":\"S. Bank, M. Wistey, H. Yuen, L. Goddard, J. Harris\",\"doi\":\"10.1109/ISCS.2003.1239913\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present, for the first time, a CW 1.5 /spl mu/m range GaInNAs(Sb) laser with threshold current density comparable to 1.3 /spl mu/m range GaInNAs laser. The lasers used in this study were conventional ridge waveguide devices. The devices were grown by solid source molecular beam epitaxy (MBE) with nitrogen supplied rf plasma cell. The active region was nominally based on a QW with room temperature (RT) photoluminescence (PL) at 1.43 /spl mu/m and line width of 29.7 meV.\",\"PeriodicalId\":404065,\"journal\":{\"name\":\"2003 International Symposium on Compound Semiconductors\",\"volume\":\"97 7\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-10-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2003 International Symposium on Compound Semiconductors\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISCS.2003.1239913\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2003 International Symposium on Compound Semiconductors","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISCS.2003.1239913","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Low threshold, CW, room temperature 1.49 /spl mu/m GaAs-based lasers
We present, for the first time, a CW 1.5 /spl mu/m range GaInNAs(Sb) laser with threshold current density comparable to 1.3 /spl mu/m range GaInNAs laser. The lasers used in this study were conventional ridge waveguide devices. The devices were grown by solid source molecular beam epitaxy (MBE) with nitrogen supplied rf plasma cell. The active region was nominally based on a QW with room temperature (RT) photoluminescence (PL) at 1.43 /spl mu/m and line width of 29.7 meV.
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