Electron effective mass of Ga/sub 0.7/In/sub 0.3/N/sub x/As/sub 1-x/

2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI:10.1109/ISCS.2003.1239914

M. Kondow, S. Fujisaki, S. Shirakata, T. Ikari, T. Kitatani

引用次数: 2

Abstract

The electron effective mass of GaInNAs is important to design excellent long-wavelength lasers on GaAs. However, it remains still unestablished. We find that it is 0.08/spl plusmn/0.1 m0 almost independent of nitrogen content from 0.3 to 1.5%.

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电子有效质量Ga/sub 0.7/In/sub 0.3/N/sub x/As/sub 1-x/

GaInNAs的电子有效质量对设计优良的GaAs长波长激光器具有重要意义。然而，它仍未确立。我们发现，在0.3 ~ 1.5%的范围内，它是0.08/spl + usmn/0.1 m0，几乎与氮含量无关。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2003 International Symposium on Compound Semiconductors

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