Low threshold, CW, room temperature 1.49 /spl mu/m GaAs-based lasers

Abstract

We present, for the first time, a CW 1.5 /spl mu/m range GaInNAs(Sb) laser with threshold current density comparable to 1.3 /spl mu/m range GaInNAs laser. The lasers used in this study were conventional ridge waveguide devices. The devices were grown by solid source molecular beam epitaxy (MBE) with nitrogen supplied rf plasma cell. The active region was nominally based on a QW with room temperature (RT) photoluminescence (PL) at 1.43 /spl mu/m and line width of 29.7 meV.