L. Geng, S. Srinivasan, R. Liu, B. Jiang, H. Omiya, F. Ponce
{"title":"In/sub x/Ga/sub 1-x/N厚外延层的微观结构","authors":"L. Geng, S. Srinivasan, R. Liu, B. Jiang, H. Omiya, F. Ponce","doi":"10.1109/ISCS.2003.1239879","DOIUrl":null,"url":null,"abstract":"0.1/spl mu/m thick In/sub x/Ga/sub 1-x/N epitaxial layers were grown by metal organic chemical vapor deposition on undoped GaN. GaN layers were /spl sim/2.7/spl mu/m thick and were grown on c-plane sapphire using low-temperature GaN buffer layers. Convergent-beam electron diffraction (CBED) was used to observe the local strain and dislocation density. The indium concentration of the In/sub x/Ga/sub 1-x/N was measured by Rutherford backscattering spectrometry (RBS). Using scanning electron microscopy and transmission electron microscopy In/sub x/Ga/sub 1-x/N layers cathodoluminescence spectra were studied.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Microstructure of In/sub x/Ga/sub 1-x/N thick epitaxial layers\",\"authors\":\"L. Geng, S. Srinivasan, R. Liu, B. Jiang, H. Omiya, F. Ponce\",\"doi\":\"10.1109/ISCS.2003.1239879\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"0.1/spl mu/m thick In/sub x/Ga/sub 1-x/N epitaxial layers were grown by metal organic chemical vapor deposition on undoped GaN. GaN layers were /spl sim/2.7/spl mu/m thick and were grown on c-plane sapphire using low-temperature GaN buffer layers. Convergent-beam electron diffraction (CBED) was used to observe the local strain and dislocation density. The indium concentration of the In/sub x/Ga/sub 1-x/N was measured by Rutherford backscattering spectrometry (RBS). Using scanning electron microscopy and transmission electron microscopy In/sub x/Ga/sub 1-x/N layers cathodoluminescence spectra were studied.\",\"PeriodicalId\":404065,\"journal\":{\"name\":\"2003 International Symposium on Compound Semiconductors\",\"volume\":\"17 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-10-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2003 International Symposium on Compound Semiconductors\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISCS.2003.1239879\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2003 International Symposium on Compound Semiconductors","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISCS.2003.1239879","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Microstructure of In/sub x/Ga/sub 1-x/N thick epitaxial layers
0.1/spl mu/m thick In/sub x/Ga/sub 1-x/N epitaxial layers were grown by metal organic chemical vapor deposition on undoped GaN. GaN layers were /spl sim/2.7/spl mu/m thick and were grown on c-plane sapphire using low-temperature GaN buffer layers. Convergent-beam electron diffraction (CBED) was used to observe the local strain and dislocation density. The indium concentration of the In/sub x/Ga/sub 1-x/N was measured by Rutherford backscattering spectrometry (RBS). Using scanning electron microscopy and transmission electron microscopy In/sub x/Ga/sub 1-x/N layers cathodoluminescence spectra were studied.
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