S. Marcinkevičius, C. Carmody, A. Gaarder, H. Tan, C. Jagadish
{"title":"离子注入InP和InGaAs用于超快光电应用","authors":"S. Marcinkevičius, C. Carmody, A. Gaarder, H. Tan, C. Jagadish","doi":"10.1109/ISCS.2003.1239972","DOIUrl":null,"url":null,"abstract":"Even though low-temperature growth allows one to obtain InP and InGaAs layers with short electron lifetimes, these layers are hardly applicable for ultrafast optoelectronic devices because of the low resistivity. Therefore, to produce layers with ultrashort carrier lifetimes and high resistivity, other methods should be employed. Here we explore an alternative technique, namely, heavy ion implantation, which has proved to be a viable alternative to the LT growth, at least in the case of GaAs.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"197 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Ion implanted InP and InGaAs for ultrafast optoelectronic applications\",\"authors\":\"S. Marcinkevičius, C. Carmody, A. Gaarder, H. Tan, C. Jagadish\",\"doi\":\"10.1109/ISCS.2003.1239972\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Even though low-temperature growth allows one to obtain InP and InGaAs layers with short electron lifetimes, these layers are hardly applicable for ultrafast optoelectronic devices because of the low resistivity. Therefore, to produce layers with ultrashort carrier lifetimes and high resistivity, other methods should be employed. Here we explore an alternative technique, namely, heavy ion implantation, which has proved to be a viable alternative to the LT growth, at least in the case of GaAs.\",\"PeriodicalId\":404065,\"journal\":{\"name\":\"2003 International Symposium on Compound Semiconductors\",\"volume\":\"197 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-10-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2003 International Symposium on Compound Semiconductors\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISCS.2003.1239972\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2003 International Symposium on Compound Semiconductors","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISCS.2003.1239972","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Ion implanted InP and InGaAs for ultrafast optoelectronic applications
Even though low-temperature growth allows one to obtain InP and InGaAs layers with short electron lifetimes, these layers are hardly applicable for ultrafast optoelectronic devices because of the low resistivity. Therefore, to produce layers with ultrashort carrier lifetimes and high resistivity, other methods should be employed. Here we explore an alternative technique, namely, heavy ion implantation, which has proved to be a viable alternative to the LT growth, at least in the case of GaAs.
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