高迁移率应变Si CMOS表征技术

2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI:10.1109/ISCS.2003.1239966

S. Zollner, Ran Liu, Q. Xie, M. Canonico, Shifeng Lu, M. Kottke, Xiangdong Wang, A. Volinsky, M. Sadaka, T. White, A. Barr, S. Thomas, B. Nguyen, C. Cook

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摘要

本文讨论了应变Si技术的关键表征技术，特别是确定Si/sub - 1-x/Ge/sub -x/合金假衬底中的应变状态、厚度和Ge含量。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Characterization techniques for high-mobility strained Si CMOS

This paper discusses critical characterization techniques for strained Si technology, especially to determine the strain state, thickness, and Ge content in the underlying Si/sub 1-x/Ge/sub x/ alloy pseudosubstrate.

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2003 International Symposium on Compound Semiconductors

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