Scattering limitations on electron transit velocity in AlGaN/GaN HEMTs

Abstract

The authors show that the high field electron transit velocity in normal AlGaN/GaN HEMTs is only about a half of the highest value obtained under ideal conditions. The investigation of structures with AlN interbarrier, demonstrate new potentials for control and minimization of the effects caused by the electron deconfinement and the build-up of non-equilibrium longitudinal optical phonons and an increase in the drift velocity and in the response frequency.