V. Gambin, T. Stark, A. Cavus, D. Mensa, M. Lange, T. Block
{"title":"MBE生长的无催化剂砷化镓纳米线","authors":"V. Gambin, T. Stark, A. Cavus, D. Mensa, M. Lange, T. Block","doi":"10.1109/ISCS.2003.1239952","DOIUrl":null,"url":null,"abstract":"Devices based on self-assembled III-V nanowires have novel applications in nano-photonics and electronics due to their reduced-dimensional nature. Many materials have been used to form nanowires, including Si, Ge, InP, GaAs, GaP, GaN, and ZnO. In this work, GaAs nanowires were grown on lithographically defined, Si/sub x/N/sub 1-x/ coated, InP substrates using solid source MBE. Crystalline and defect structures were analyzed using cross-section high-resolution transmission electron microscopy (HRTEM).","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"109 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Catalyst-free GaAs nanowires grown by MBE\",\"authors\":\"V. Gambin, T. Stark, A. Cavus, D. Mensa, M. Lange, T. Block\",\"doi\":\"10.1109/ISCS.2003.1239952\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Devices based on self-assembled III-V nanowires have novel applications in nano-photonics and electronics due to their reduced-dimensional nature. Many materials have been used to form nanowires, including Si, Ge, InP, GaAs, GaP, GaN, and ZnO. In this work, GaAs nanowires were grown on lithographically defined, Si/sub x/N/sub 1-x/ coated, InP substrates using solid source MBE. Crystalline and defect structures were analyzed using cross-section high-resolution transmission electron microscopy (HRTEM).\",\"PeriodicalId\":404065,\"journal\":{\"name\":\"2003 International Symposium on Compound Semiconductors\",\"volume\":\"109 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-10-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2003 International Symposium on Compound Semiconductors\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISCS.2003.1239952\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2003 International Symposium on Compound Semiconductors","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISCS.2003.1239952","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Devices based on self-assembled III-V nanowires have novel applications in nano-photonics and electronics due to their reduced-dimensional nature. Many materials have been used to form nanowires, including Si, Ge, InP, GaAs, GaP, GaN, and ZnO. In this work, GaAs nanowires were grown on lithographically defined, Si/sub x/N/sub 1-x/ coated, InP substrates using solid source MBE. Crystalline and defect structures were analyzed using cross-section high-resolution transmission electron microscopy (HRTEM).
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