Laser direct write for wide-band gap semiconductor device fabrication: doping

Abstract

Wide-band gap semiconductor materials promise superior operational voltages, temperatures and frequencies compared to those of silicon. A new and simple process based on laser induced phase transformations is formed as a solution to wide-bandgap material integration issues caused by incompatibilities with conventional dielectric deposition, etching, oxidation, metallization and doping technologies. Laser coupling with wide-bandgap semiconductors selectively converts irradiated regions to conductors, semiconductors or insulators. In this process metallization for drains, sources, interconnects, vias and contacts is intrinsic, without the addition of metals and doping is accomplished using primarily gaseous dopant sources. Laser doping of 4H-SiC is described in this paper.