基于磷化铟的1.55 /spl mu/m p-i-n光电探测器与硅CMOS光时钟接收电路的集成

E. Atmaca, N. Drego, D. Boning, C. Fonstad, L. W. Khai, Y. S. Fatt
{"title":"基于磷化铟的1.55 /spl mu/m p-i-n光电探测器与硅CMOS光时钟接收电路的集成","authors":"E. Atmaca, N. Drego, D. Boning, C. Fonstad, L. W. Khai, Y. S. Fatt","doi":"10.1109/ISCS.2003.1239973","DOIUrl":null,"url":null,"abstract":"Describes the development of an RM/sup 3/ technique, Aligned pillar bonding (APB), and its application to optical clock distribution. APB integrates lattice mismatched materials using aligned, selective area wafer bonding at reduced temperature (around 300/spl deg/C), which protects the electronic chips from the adverse effects of high temperatures, and reduces the thermal expansion mismatch concerns.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"40 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"RM/sup 3/ integration of indium phosphide based 1.55 /spl mu/m p-i-n photodetectors with silicon CMOS optical clock receiver circuits\",\"authors\":\"E. Atmaca, N. Drego, D. Boning, C. Fonstad, L. W. Khai, Y. S. Fatt\",\"doi\":\"10.1109/ISCS.2003.1239973\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Describes the development of an RM/sup 3/ technique, Aligned pillar bonding (APB), and its application to optical clock distribution. APB integrates lattice mismatched materials using aligned, selective area wafer bonding at reduced temperature (around 300/spl deg/C), which protects the electronic chips from the adverse effects of high temperatures, and reduces the thermal expansion mismatch concerns.\",\"PeriodicalId\":404065,\"journal\":{\"name\":\"2003 International Symposium on Compound Semiconductors\",\"volume\":\"40 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-10-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2003 International Symposium on Compound Semiconductors\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISCS.2003.1239973\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2003 International Symposium on Compound Semiconductors","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISCS.2003.1239973","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

介绍了一种RM/sup /技术的发展,对准柱键合(APB)及其在光时钟分配中的应用。APB在降低温度(约300/spl°C)下使用对齐的选择性区域晶圆键合集成晶格错配材料,从而保护电子芯片免受高温的不利影响,并减少热膨胀错配问题。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
RM/sup 3/ integration of indium phosphide based 1.55 /spl mu/m p-i-n photodetectors with silicon CMOS optical clock receiver circuits
Describes the development of an RM/sup 3/ technique, Aligned pillar bonding (APB), and its application to optical clock distribution. APB integrates lattice mismatched materials using aligned, selective area wafer bonding at reduced temperature (around 300/spl deg/C), which protects the electronic chips from the adverse effects of high temperatures, and reduces the thermal expansion mismatch concerns.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信