GaSb光电二极管干等离子体和湿化学钝化的比较

2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI:10.1109/ISCS.2003.1239964

V. Bhagwat, J. Langer, I. Bhat, P. Dutta, T. Refaat, M. Abedin

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引用次数: 0

摘要

本文报道了硫化铵钝化对湿蚀刻样品的影响。从漏电流、击穿电压、零偏阻面积积和二极管响应性等方面综述了器件的性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A comparison of dry plasma and wet chemical passivation of GaSb photodiodes

In this paper, the effect of ammonium sulfide passivation on the wet etched sample is reported. The device performance in terms of leakage current breakdown voltage, zero bias resistance area product and responsivity for the diodes is reviewed.

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2003 International Symposium on Compound Semiconductors

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