用于小功率放大器的后置发射体结构C-up GaAs hbt

2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI:10.1109/ISCS.2003.1239975

K. Mochizuki, K. Tanaka, C. Takubo, H. Matsumoto, T. Tanoue, I. Ohbu

{"title":"用于小功率放大器的后置发射体结构C-up GaAs hbt","authors":"K. Mochizuki, K. Tanaka, C. Takubo, H. Matsumoto, T. Tanoue, I. Ohbu","doi":"10.1109/ISCS.2003.1239975","DOIUrl":null,"url":null,"abstract":"In this paper, we have successfully fabricated ballast-free HBTs with L of 15 /spl mu/m and V/sub ce,.sat/ of 0.01 V by employing a backside-emitter-structure collector-up (C-up) configuration with ohmic collector contacts. Preliminary results on performance of these HBTs show their strong potential for application in small and highly efficient PA MMICs.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Backside-emitter-structure C-up GaAs HBTs for small power amplifiers\",\"authors\":\"K. Mochizuki, K. Tanaka, C. Takubo, H. Matsumoto, T. Tanoue, I. Ohbu\",\"doi\":\"10.1109/ISCS.2003.1239975\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we have successfully fabricated ballast-free HBTs with L of 15 /spl mu/m and V/sub ce,.sat/ of 0.01 V by employing a backside-emitter-structure collector-up (C-up) configuration with ohmic collector contacts. Preliminary results on performance of these HBTs show their strong potential for application in small and highly efficient PA MMICs.\",\"PeriodicalId\":404065,\"journal\":{\"name\":\"2003 International Symposium on Compound Semiconductors\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-10-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2003 International Symposium on Compound Semiconductors\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISCS.2003.1239975\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2003 International Symposium on Compound Semiconductors","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISCS.2003.1239975","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

在本文中，我们成功地制作了L为15 /spl mu/m和V/sub / ce的无镇流器HBTs。采用带有欧姆集电极接点的后置发射体结构集电极(C-up)配置。初步结果表明，这些hbt在小型高效PA mmic中具有强大的应用潜力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Backside-emitter-structure C-up GaAs HBTs for small power amplifiers

In this paper, we have successfully fabricated ballast-free HBTs with L of 15 /spl mu/m and V/sub ce,.sat/ of 0.01 V by employing a backside-emitter-structure collector-up (C-up) configuration with ohmic collector contacts. Preliminary results on performance of these HBTs show their strong potential for application in small and highly efficient PA MMICs.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2003 International Symposium on Compound Semiconductors

自引率

0.00%

发文量