GaN/AlGaN量子阱结构中子带间跃迁从诱导吸收到饱和的转变

2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI:10.1109/ISCS.2003.1239882

Gang Chen, R. Rapaport, C. Gmachl, H. Ng

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引用次数: 0

摘要

在本文中，我们证明了不同的GaN异质结构表现出不同的非线性光学响应。利用光谱集成泵浦探测技术研究了响应。GaN量子阱(QW)结构中受激载流子的子带间弛豫动力学及其非线性对于基于这些跃迁的超快光电应用至关重要。

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Transition from induced absorption to saturation of intersubband transitions in GaN/AlGaN quantum well structures

In this paper, we show that different GaN heterostructures exhibit distinct nonlinear optical response. The response is studied using spectrally integrated pump-probe technique. The intersubband (ISBT) relaxation dynamics of excited carriers in GaN quantum well(QW) structures and their nonlinearities is essential for possible ultrafast optoelectronic applications based on these transitions.

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2003 International Symposium on Compound Semiconductors

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