Frequency and breakdown properties of AlGaN/GaN HEMTs

Abstract

AlGaN/GaN heterostructure transistors show potential in high-frequency high-power applications because of their high breakdown voltages and high electron saturation velocities. The operating drain voltage, limiting the maximum RF output power, should be lower than breakdown voltage of the device. The frequency and breakdown properties of the AlGaN/GaN heterostructure transistors have been studied.