AlGaN-GaN HEMTs: material, device, circuit technology and applications

2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI:10.1109/ISCS.2003.1239957

P. Parikh, Y. Wu, P. Chavarkar, M. Moore, U. Mishra, S. Sheppard, R.P. Smith, A. Saxler, J. Duc, W. Pribble, J. Milligan, J. Palmour

引用次数: 4

Abstract

In this paper recent progress in material, device and circuit technology of GaN based HEMT is discussed. We have also developed GaN HEMT hybrid amplifiers as well as MMICs, including air wedge and MIMC capacitors and resistors.

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gan - gan hemt:材料、器件、电路技术及应用

本文综述了氮化镓基HEMT的材料、器件和电路技术的最新进展。我们还开发了GaN HEMT混合放大器以及mmic，包括空气楔和MIMC电容器和电阻。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2003 International Symposium on Compound Semiconductors

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