gan - gan hemt:材料、器件、电路技术及应用

2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI:10.1109/ISCS.2003.1239957

P. Parikh, Y. Wu, P. Chavarkar, M. Moore, U. Mishra, S. Sheppard, R.P. Smith, A. Saxler, J. Duc, W. Pribble, J. Milligan, J. Palmour

{"title":"gan - gan hemt:材料、器件、电路技术及应用","authors":"P. Parikh, Y. Wu, P. Chavarkar, M. Moore, U. Mishra, S. Sheppard, R.P. Smith, A. Saxler, J. Duc, W. Pribble, J. Milligan, J. Palmour","doi":"10.1109/ISCS.2003.1239957","DOIUrl":null,"url":null,"abstract":"In this paper recent progress in material, device and circuit technology of GaN based HEMT is discussed. We have also developed GaN HEMT hybrid amplifiers as well as MMICs, including air wedge and MIMC capacitors and resistors.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"173 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"AlGaN-GaN HEMTs: material, device, circuit technology and applications\",\"authors\":\"P. Parikh, Y. Wu, P. Chavarkar, M. Moore, U. Mishra, S. Sheppard, R.P. Smith, A. Saxler, J. Duc, W. Pribble, J. Milligan, J. Palmour\",\"doi\":\"10.1109/ISCS.2003.1239957\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper recent progress in material, device and circuit technology of GaN based HEMT is discussed. We have also developed GaN HEMT hybrid amplifiers as well as MMICs, including air wedge and MIMC capacitors and resistors.\",\"PeriodicalId\":404065,\"journal\":{\"name\":\"2003 International Symposium on Compound Semiconductors\",\"volume\":\"173 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-10-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2003 International Symposium on Compound Semiconductors\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISCS.2003.1239957\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2003 International Symposium on Compound Semiconductors","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISCS.2003.1239957","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

本文综述了氮化镓基HEMT的材料、器件和电路技术的最新进展。我们还开发了GaN HEMT混合放大器以及mmic，包括空气楔和MIMC电容器和电阻。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

AlGaN-GaN HEMTs: material, device, circuit technology and applications

In this paper recent progress in material, device and circuit technology of GaN based HEMT is discussed. We have also developed GaN HEMT hybrid amplifiers as well as MMICs, including air wedge and MIMC capacitors and resistors.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2003 International Symposium on Compound Semiconductors

自引率

0.00%

发文量