{"title":"InGaAs异质外延应变弛豫的实时研究","authors":"R. Beresford, C. Lynch, S.-K. Hong, E. Chason","doi":"10.1109/ISCS.2003.1239896","DOIUrl":null,"url":null,"abstract":"The relaxation behavior in InGaAs heteroepitaxy during growth interrupts reveal that at a given dislocation density, the glide velocity can be increased orders of magnitude by the presence of the growth flux. These results are interpreted in terms of adatom enhanced nucleation of single kinks at the growth surface.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Real-time studies of strain relaxation in InGaAs heteroepitaxy\",\"authors\":\"R. Beresford, C. Lynch, S.-K. Hong, E. Chason\",\"doi\":\"10.1109/ISCS.2003.1239896\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The relaxation behavior in InGaAs heteroepitaxy during growth interrupts reveal that at a given dislocation density, the glide velocity can be increased orders of magnitude by the presence of the growth flux. These results are interpreted in terms of adatom enhanced nucleation of single kinks at the growth surface.\",\"PeriodicalId\":404065,\"journal\":{\"name\":\"2003 International Symposium on Compound Semiconductors\",\"volume\":\"11 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-10-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2003 International Symposium on Compound Semiconductors\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISCS.2003.1239896\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2003 International Symposium on Compound Semiconductors","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISCS.2003.1239896","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Real-time studies of strain relaxation in InGaAs heteroepitaxy
The relaxation behavior in InGaAs heteroepitaxy during growth interrupts reveal that at a given dislocation density, the glide velocity can be increased orders of magnitude by the presence of the growth flux. These results are interpreted in terms of adatom enhanced nucleation of single kinks at the growth surface.
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