Fabrication processes for high performance InAs-based HBTs

2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI:10.1109/ISCS.2003.1239963

S. Thomas, A. Arthur, K. Elliot, D. Chow, P. Brewer, R. Rajavel, B. Shi, P. Deelman, C. Fields, M. Madhav

引用次数: 2

Abstract

InAs-based HBT technology was discussed. Several of the available fabrication processes were presented, as well as the device performance obtained from some of the options.

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高性能inas基hbt的制造工艺

讨论了基于红外光谱的HBT技术。介绍了几种可用的制造工艺，以及从一些选项中获得的器件性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2003 International Symposium on Compound Semiconductors

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