{"title":"Oxides beyond SiO/sub 2/: strategies to integrate oxides epitaxially with silicon","authors":"D. Schlom","doi":"10.1109/ISCS.2003.1239965","DOIUrl":null,"url":null,"abstract":"A methodology is described, based on thermodynamics and oxidation kinetics, for the integration of oxides with silicon with the goal of achieving the desired oxide in close proximity with the underlying silicon substrate.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"39 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2003 International Symposium on Compound Semiconductors","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISCS.2003.1239965","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A methodology is described, based on thermodynamics and oxidation kinetics, for the integration of oxides with silicon with the goal of achieving the desired oxide in close proximity with the underlying silicon substrate.