{"title":"采用v槽RFPD/HBT集成技术的单片集成inp基1.55 /spl mu/m光电接收器","authors":"B. Lee, Y. Song, K. Yang","doi":"10.1109/ISCS.2003.1239968","DOIUrl":null,"url":null,"abstract":"InP-based photoreceivers were successfully integrated with the InP V-groove and the refracting facet photodiode (RFPD), for the first time, based on the shared layer integration technology. The InP-V groove optical bench and the RFPD were simultaneously fabricated using the base-collector layers of the InP/InGaAs HBT. The alignment process of the optical fibre was greatly simplified using the fabricated InP V-grooves. The developed integration technology allowing simple and efficient optical coupling using the on-chip InP V-groove was high speed photoreceivers arrays for dense WDM application.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"35 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Monolithically integrated InP-based 1.55 /spl mu/m photoreceivers using V-grooved RFPD/HBT integration technology\",\"authors\":\"B. Lee, Y. Song, K. Yang\",\"doi\":\"10.1109/ISCS.2003.1239968\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"InP-based photoreceivers were successfully integrated with the InP V-groove and the refracting facet photodiode (RFPD), for the first time, based on the shared layer integration technology. The InP-V groove optical bench and the RFPD were simultaneously fabricated using the base-collector layers of the InP/InGaAs HBT. The alignment process of the optical fibre was greatly simplified using the fabricated InP V-grooves. The developed integration technology allowing simple and efficient optical coupling using the on-chip InP V-groove was high speed photoreceivers arrays for dense WDM application.\",\"PeriodicalId\":404065,\"journal\":{\"name\":\"2003 International Symposium on Compound Semiconductors\",\"volume\":\"35 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-10-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2003 International Symposium on Compound Semiconductors\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISCS.2003.1239968\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2003 International Symposium on Compound Semiconductors","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISCS.2003.1239968","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
InP-based photoreceivers were successfully integrated with the InP V-groove and the refracting facet photodiode (RFPD), for the first time, based on the shared layer integration technology. The InP-V groove optical bench and the RFPD were simultaneously fabricated using the base-collector layers of the InP/InGaAs HBT. The alignment process of the optical fibre was greatly simplified using the fabricated InP V-grooves. The developed integration technology allowing simple and efficient optical coupling using the on-chip InP V-groove was high speed photoreceivers arrays for dense WDM application.