采用v槽RFPD/HBT集成技术的单片集成inp基1.55 /spl mu/m光电接收器

B. Lee, Y. Song, K. Yang
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引用次数: 0

摘要

基于共享层集成技术,首次成功地将基于InP的光电接收器与InP v型槽和折射面光电二极管(RFPD)集成在一起。利用InP/InGaAs HBT的基极集电极层,同时制备了InP- v槽光台和RFPD。利用所制备的InP v型槽,大大简化了光纤的对准过程。开发的集成技术允许使用片上InP v槽进行简单高效的光耦合,是用于密集波分复用应用的高速光电接收器阵列。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Monolithically integrated InP-based 1.55 /spl mu/m photoreceivers using V-grooved RFPD/HBT integration technology
InP-based photoreceivers were successfully integrated with the InP V-groove and the refracting facet photodiode (RFPD), for the first time, based on the shared layer integration technology. The InP-V groove optical bench and the RFPD were simultaneously fabricated using the base-collector layers of the InP/InGaAs HBT. The alignment process of the optical fibre was greatly simplified using the fabricated InP V-grooves. The developed integration technology allowing simple and efficient optical coupling using the on-chip InP V-groove was high speed photoreceivers arrays for dense WDM application.
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