Surface reconstructions of InGaAs layers

Abstract

In this paper, we examined the morphology and surface reconstruction of InGa/sub 1-x/As alloy layers during growth and after annealing. Films of different compositions were grown by molecular beam epitaxy on GaAs and InP(001) substrates to thickness less than the critical thickness for 3D islanding or misfit dislocations formation, and examined using in-situ scanning tunneling microscopy.